IRF V N-channel Mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS. IRF Datasheet PDF Download – V N-Channel MOSFET, IRF data sheet. Seventh Generation HEXFET® Power MOSFETs from. International Rectifier utilize advanced processing techniques to achieve extremely low.

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Thermal Resistance, Junction-to-Ambient Max.

IRF datasheet & applicatoin notes – Datasheet Archive

Thermal Resistance, Junction-to-Case Max. Maximum lead temperature for soldering purposes. This datasheet contains final specifications. Gate-Body Leakage Current, Forward. Datashee advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Drain Current and Gate Voltage. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Case-to-Sink Typ.

Single Pulsed Avalanche Energy. View PDF for Mobile. This advanced technology has been especially tailored to.

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C rss Reverse Transfer Capacitance. Note 4 — 1. I AR Avalanche Current. Min Typ Max Units.

Pulse width limited by maximum junction temperature. Thermal Resistance, Junction-to-Ambient Max. Fairchild Semiconductor Electronic Components Datasheet. These devices are well.

IRF650 200V N-channel Mosfet

Essentially independent of operating temperature. Q rr Reverse Recovery Charge. Q gd Gate-Drain Charge. Specifications may change in any manner without notice. Thermal Resistance, Junction-to-Case Max.

Operating and Storage Temperature Range. Zero Gate Voltage Drain Current. These N-Channel enhancement mode power field effect. Operating and Storage Temperature Range. These N-Channel enhancement mode power field effect. Drain-Source Diode Forward Voltage. C iss Input Capacitance.

Pulse width limited by maximum junction temperature 2. Q gd Gate-Drain Charge. Gate-Body Leakage Current, Forward. Pulse width limited by maximum junction temperature.

I AR Avalanche Current. Maximum lead temperature for soldering purposes. Thermal Datashert, Case-to-Sink Typ. Body Diode Forward Voltage. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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Formative or In Design. Essentially independent of operating temperature. Note 4, 5 Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. C iss Input Capacitance. Fairchild Semiconductor Electronic Components Datasheet.

IRF650 PDF Datasheet浏览和下载

Thermal Resistance, Junction-to-Case Max. The following are registered and unregistered trademarks Fairchild Semiconductor owns or is datwsheet to use and is not intended to be an exhaustive list of all such trademarks. EnSignaTM Across the board. Gate-Body Leakage Current, Reverse.